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GaN-Powered 50W 1000-1300MHz Drone Signal Jammer | Modular & Customizable

Next-Generation 50W L-Band Jammer Module with GaN Technology This represents a significant leap in drone countermeasure technology: a 50W RF jammer module for the 1000-1300MHz (L-band) spectrum, engineered using advanced Gallium Nitride (GaN) semiconductor technology. It is designed to deliver superior power, efficiency, and reliability for demanding Count……

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Functional characteristics

Next-Generation 50W L-Band Jammer Module with GaN Technology
This represents a significant leap in drone countermeasure technology: a 50W RF jammer module for the 1000-1300MHz (L-band) spectrum, engineered using advanced Gallium Nitride (GaN) semiconductor technology. It is designed to deliver superior power, efficiency, and reliability for demanding Counter-Unmanned Aerial System (C-UAS) applications where robust signal suppression of FPV and control links is critical. The module offers unparalleled flexibility with support for multiple customizable signal source inputs.

Technical Specifications & Configurable Options

Parameter	Specification	Customizable Options
Core Frequency Range	1000 – 1300 MHz	20MHz – 6GHz
Output Power	50W (47 ±1 dBm)	–
RF Amplifier Technology	Class AB, GaN-on-SiC	–
Default Internal Source	High-Speed Noise-Modulated	–
External Source Input	SMA Female Port	VCO, DDS, or SDR compatible
Default Sweep Rate	270 KHz	Adjustable 100 – 500 KHz
Operating Voltage / Current	28V (24-28V) / ≤ 4.5A	–
Impedance	50 Ohms (Input/Output)	–
Operating Temperature	-20°C to +65°C	–
Status Indicators	Power, Over-voltage, Over-temperature	–
Dimensions (LxWxH)	117 x 58 x 18 mm	Custom enclosure available
Weight	~300 g	–

Defining Features & Technological Advantages

GaN-on-SiC Amplifier Core: Utilizes Class AB GaN technology on a Silicon Carbide substrate, enabling higher power density, broader instantaneous bandwidth, and greater thermal efficiency compared to traditional solutions.
High-Power, Wideband Performance: Delivers a full 50W of output power across the entire 1000-1300MHz band for comprehensive coverage and extended effective range.
Source-Agnostic & Highly Flexible: While equipped with a built-in noise source, it accepts external VCO, DDS, or SDR inputs, allowing for tailored jamming waveforms and sophisticated signal protocols.
Optimized Thermal Management: The GaN amplifier is mounted on an efficient copper baseplate, ensuring stable operation and high reliability under continuous high-power duty cycles.
Compact & Ruggedized Form Factor: The design prioritizes a small footprint and lightweight construction without compromising durability, making it ideal for integration into portable, mobile, or fixed-site platforms.
Complete System Monitoring: Integrated LEDs provide clear visual status for power, fault, and thermal conditions, supporting system diagnostics.

Intended Applications
This high-performance module is engineered for integration into advanced electronic warfare and counter-UAS systems, including:

Military and government-grade portable jamming systems.
Vehicle-mounted or aerostat-deployed wide-area C-UAS platforms.
Fixed-site critical asset protection systems requiring high uptime and reliability.
Research and development platforms for electronic attack (EA) waveform testing.

Why Choose This Module?
This 50W L-Band Jammer Module sets a new standard by combining the performance benefits of GaN amplifier technology with exceptional system integration flexibility. It is the optimal choice for developers and integrators who require a future-proof, high-power core component capable of adapting to evolving drone threats through customizable signal generation and agile, wideband jamming power.