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100W GaN Drone Jamming Module 5150–5250MHz | High-Power GaN Counter-UAV Shielding Module

Product Overview The 100W GaN Drone Jamming Module (5150–5250MHz) is a high-power RF interference module designed for professional counter-UAV and electronic defense applications. Built with advanced Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology, the module delivers stable 100W output power, excellent thermal efficiency, and long-term operatio……

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Functional characteristics

Product Overview

The 100W GaN Drone Jamming Module (5150–5250MHz) is a high-power RF interference module designed for professional counter-UAV and electronic defense applications. Built with advanced Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology, the module delivers stable 100W output power, excellent thermal efficiency, and long-term operational reliability.

Featuring a Class AB GaN amplifier design, wide instantaneous bandwidth, and a built-in high-speed noise modulation signal source, this module effectively disrupts drone control and data transmission links operating in the 5.1GHz band. Its compact size and lightweight structure make it ideal for integration into fixed, vehicle-mounted, or mobile anti-drone platforms.

Key Features

100W high-power GaN output for effective UAV interference
Operating frequency: 5150–5250MHz (customizable)
Class AB GaN amplifier design
Wide instantaneous bandwidth
50-ohm RF input/output impedance
Compact size and lightweight construction
High reliability and rugged design
Advanced thermal management using patented heat-dissipation technology

Advanced GaN Technology

This module adopts GaN-on-SiC semiconductor technology and is mounted on a copper base carrier. Combined with proprietary thermal processing techniques, it ensures:

Superior heat dissipation
Stable performance under continuous high-power operation
Extended service life in harsh operating environments

Technical Specifications

Item	Specification	Notes
Operating Frequency	5150–5250MHz	Customizable
Output Power	50 ±1 dBm (100W)	Continuous output
Amplifier Type	GaN (Class AB)	GaN-on-SiC
Operating Voltage	DC 28V	Range: 28–32V
Operating Current	≤9.2A	@100W output
Signal Source	Built-in high-speed noise modulation	Optional VCO / DDS / SDR
Analog Sweep Speed	270kHz	Customizable: 100–500kHz
Operating Temperature	-20℃ to +65℃	Normal operation
RF Connector	N-Female	Low-loss output
Status Indicators	Power / Over-voltage / Over-temperature	LED
Dimensions	150 × 80 × 22 mm	Compact design
Weight	800 g	Lightweight

Applications

Counter-UAV and anti-drone defense systems
RF signal shielding and electronic countermeasures
Fixed, vehicle-mounted, or mobile drone jamming platforms
Integrated jammer guns and modular interference systems
Protection of sensitive facilities and restricted airspace

Customization Options

The 5150–5250MHz GaN drone jamming module supports customization including:

Frequency range adjustment
Sweep speed configuration
Alternative signal sources (VCO / DDS / SDR)
Mechanical and interface customization for system integration

Conclusion

The 100W 5150–5250MHz GaN Drone Jamming Module combines high output power, advanced GaN-on-SiC technology, superior thermal management, and flexible customization. It is a reliable and powerful core module for modern professional counter-UAV and RF interference systems.